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Activation annealing of ultra-low-energy implanted boron in silicon: a study combining experiment and process modeling
Activation annealing of ultra-low-energy implanted boron in silicon: a study combining experiment and process modeling
Activation annealing of ultra-low-energy implanted boron in silicon: a study combining experiment and process modeling
Schroer, E. (Autor:in) / Privitera, V. (Autor:in) / Priolo, F. (Autor:in) / Napolitani, E. (Autor:in) / Carnera, A. (Autor:in)
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 3 ; 303-309
01.01.2000
7 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.38152
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