Activation annealing of ultra-low-energy implanted boron in silicon: a study combining experiment and process modeling: Fid-Bau Portal

Activation annealing of ultra-low-energy implanted boron in silicon: a study combining experiment and process modeling

Schroer, E. / Privitera, V. / Priolo, F. / Napolitani, E. / Carnera, A.

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Activation annealing of ultra-low-energy implanted boron in silicon: a study combining experiment and process modeling

Schroer, E. / Privitera, V. / Priolo, F. / Napolitani, E. / Carnera, A.

Activation annealing of ultra-low-energy implanted boron in silicon: a study combining experiment and process modeling

Schroer, E. / Privitera, V. / Priolo, F. / Napolitani, E. / Carnera, A.

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Document information

Title:

Activation annealing of ultra-low-energy implanted boron in silicon: a study combining experiment and process modeling

Contributors:

Schroer, E. (author) / Privitera, V. (author) / Priolo, F. (author) / Napolitani, E. (author) / Carnera, A. (author)

Published in:

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 3 ; 303-309

Publication date:

2000-01-01

Size:

7 pages

ISSN:

1369-8001

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.38152

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