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Activation annealing of ultra-low-energy implanted boron in silicon: a study combining experiment and process modeling
Activation annealing of ultra-low-energy implanted boron in silicon: a study combining experiment and process modeling
Activation annealing of ultra-low-energy implanted boron in silicon: a study combining experiment and process modeling
Schroer, E. (author) / Privitera, V. (author) / Priolo, F. (author) / Napolitani, E. (author) / Carnera, A. (author)
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 3 ; 303-309
2000-01-01
7 pages
Article (Journal)
English
DDC:
621.38152
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