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Ion Implantation Induced Defects in 6H-SiC and their Annealing Behaviour
Ion Implantation Induced Defects in 6H-SiC and their Annealing Behaviour
Ion Implantation Induced Defects in 6H-SiC and their Annealing Behaviour
Anwand, W. (Autor:in) / Brauer, G. (Autor:in) / Panknin, D. (Autor:in) / Skorupa, W. (Autor:in)
MATERIALS SCIENCE FORUM ; 363/365 ; 442-444
01.01.2001
3 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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