Ion Implantation Induced Defects in 6H-SiC and their Annealing Behaviour

Anwand, W. / Brauer, G. / Panknin, D. et al. | British Library Online Contents | 2001

Formation of Extended Defects in 4H-SiC Induced by Ion Implantation/Annealing

Nagano, M. / Tsuchida, H. / Suzuki, T. et al. | British Library Online Contents | 2009

Annealing Behavior of N^+-Implantation-Induced Defects in SiC at Low Temperatures

Satoh, M. / Suzuki, T. / Miyagawa, S. | British Library Online Contents | 2006

Self-implantation of Cz-Si: Clustering and annealing of defects

Abdulmalik, D. A. / Coleman, P. G. / Al-Qaradawi, I. Y. | British Library Online Contents | 2006

Isochronal annealing study of hydrogen interaction with implantation-induced point defects in p-type silicon

Tokuda, Y. / Sato, H. | British Library Online Contents | 2003