Ion Implantation Induced Defects in 6H-SiC and their Annealing Behaviour: Fid-Bau Portal

Ion Implantation Induced Defects in 6H-SiC and their Annealing Behaviour

Anwand, W. / Brauer, G. / Panknin, D. / Skorupa, W.

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Ion Implantation Induced Defects in 6H-SiC and their Annealing Behaviour

Anwand, W. / Brauer, G. / Panknin, D. / Skorupa, W.

Ion Implantation Induced Defects in 6H-SiC and their Annealing Behaviour

Anwand, W. / Brauer, G. / Panknin, D. / Skorupa, W.

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Check availability in my library

Order at Subito €

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Document information

Title:

Ion Implantation Induced Defects in 6H-SiC and their Annealing Behaviour

Contributors:

Anwand, W. (author) / Brauer, G. (author) / Panknin, D. (author) / Skorupa, W. (author)

Published in:

MATERIALS SCIENCE FORUM ; 363/365 ; 442-444

Publication date:

2001-01-01

Size:

3 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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