Ion Implantation Induced Defects in 6H-SiC and their Annealing Behaviour

Anwand, W. / Brauer, G. / Panknin, D. et al. | British Library Online Contents | 2001

Annealing Behavior of N^+-Implantation-Induced Defects in SiC at Low Temperatures

Satoh, M. / Suzuki, T. / Miyagawa, S. | British Library Online Contents | 2006

Detection and Characterization of Defects Induced by Ion Implantation/Annealing Process in SiC

Nagano, M. / Tsuchida, H. / Suzuki, T. et al. | British Library Online Contents | 2009

Boron interaction with extended defects induced by He-H co-implantation in Si

Gaudin, G. / Cayrel, F. / Bongiorno, C. et al. | British Library Online Contents | 2005

Self-implantation of Cz-Si: Clustering and annealing of defects

Abdulmalik, D. A. / Coleman, P. G. / Al-Qaradawi, I. Y. | British Library Online Contents | 2006