Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Low-temperature selective epitaxy of silicon with chlorinated chemistry by RTCVD
Low-temperature selective epitaxy of silicon with chlorinated chemistry by RTCVD
Low-temperature selective epitaxy of silicon with chlorinated chemistry by RTCVD
Ribot, P. (Autor:in) / Dutartre, D. (Autor:in)
MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 89 ; 306 - 309
01.01.2002
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Selective SiGe epitaxy by rtcvd for new device architectures
British Library Online Contents | 2002
|Effect of Technical Condition in RTCVD on Deposeed Poly-Si Thin-Film
British Library Online Contents | 2005
|Microstructure evolution of nanometer-sized hemispherical-grained Si deposited by RTCVD
British Library Online Contents | 2001
|Thermal stability of W on RTCVD Si~1~-~xGe~x films
British Library Online Contents | 1993
|Comparative TEM Investigation of MBE and RTCVD Conversion of Si into SiC
British Library Online Contents | 2003
|