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Effects of Different Post-Implantation Annealing Conditions on the Electrical Properties of Interfaces to p-Type Implanted 4H-SiC
Effects of Different Post-Implantation Annealing Conditions on the Electrical Properties of Interfaces to p-Type Implanted 4H-SiC
Effects of Different Post-Implantation Annealing Conditions on the Electrical Properties of Interfaces to p-Type Implanted 4H-SiC
Frazzetto, A. (Autor:in) / Roccaforte, F. (Autor:in) / Giannazzo, F. (Autor:in) / Nigro, R.L. (Autor:in) / Saggio, M. (Autor:in) / Zanetti, E. (Autor:in) / Raineri, V. (Autor:in)
MATERIALS SCIENCE FORUM ; 717/720 ; 825-828
01.01.2012
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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