Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Reactive Ion Etching Process of 4H-SiC Using the CHF~3/O~2 Mixtures and a Post-O~2 Plasma-Etching Process
Reactive Ion Etching Process of 4H-SiC Using the CHF~3/O~2 Mixtures and a Post-O~2 Plasma-Etching Process
Reactive Ion Etching Process of 4H-SiC Using the CHF~3/O~2 Mixtures and a Post-O~2 Plasma-Etching Process
Kang, S. C. (Autor:in) / Shin, M. W. (Autor:in)
MATERIALS SCIENCE FORUM ; 389/393 ; 949-952
01.01.2002
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Reactive ion etching of FePt using inductively coupled plasma
| British Library Online Contents | 2008
Inductively coupled plasma reactive ion etching of sapphire using C2F6- and NF3-based gas mixtures
| British Library Online Contents | 2008
Method for Reducing Reactive Ion Etching Lag in MEMS Process
| British Library Online Contents | 2002
| British Library Online Contents | 2004
Deep reactive ion etching of PMMA
| British Library Online Contents | 2004