Reactive Ion Etching Process of 4H-SiC Using the CHF~3/O~2 Mixtures and a Post-O~2 Plasma-Etching Process: Fid-Bau Portal

Reactive Ion Etching Process of 4H-SiC Using the CHF~3/O~2 Mixtures and a Post-O~2 Plasma-Etching Process

Kang, S. C. / Shin, M. W.

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Reactive Ion Etching Process of 4H-SiC Using the CHF~3/O~2 Mixtures and a Post-O~2 Plasma-Etching Process

Kang, S. C. / Shin, M. W.

Reactive Ion Etching Process of 4H-SiC Using the CHF~3/O~2 Mixtures and a Post-O~2 Plasma-Etching Process

Kang, S. C. / Shin, M. W.

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Order at Subito €

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Document information

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Document information

Title:

Reactive Ion Etching Process of 4H-SiC Using the CHF~3/O~2 Mixtures and a Post-O~2 Plasma-Etching Process

Contributors:

Kang, S. C. (author) / Shin, M. W. (author)

Published in:

MATERIALS SCIENCE FORUM ; 389/393 ; 949-952

Publication date:

2002-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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