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TCAD Optimisation of 4H-SiC Channel-Doped MOSFET with P-Polysilicon Gate
TCAD Optimisation of 4H-SiC Channel-Doped MOSFET with P-Polysilicon Gate
TCAD Optimisation of 4H-SiC Channel-Doped MOSFET with P-Polysilicon Gate
Adachi, K. (Autor:in) / Johnson, C. M. (Autor:in) / Arai, K. (Autor:in) / Fukuda, K. (Autor:in) / Harada, S. (Autor:in) / Shinohe, T. (Autor:in)
MATERIALS SCIENCE FORUM ; 389/393 ; 1085-1088
01.01.2002
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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