TCAD Optimisation of 4H-SiC Channel-Doped MOSFET with P-Polysilicon Gate: Fid-Bau Portal

TCAD Optimisation of 4H-SiC Channel-Doped MOSFET with P-Polysilicon Gate

Adachi, K. / Johnson, C. M. / Arai, K. / Fukuda, K. / Harada, S. / Shinohe, T.

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TCAD Optimisation of 4H-SiC Channel-Doped MOSFET with P-Polysilicon Gate

Adachi, K. / Johnson, C. M. / Arai, K. / Fukuda, K. / Harada, S. / Shinohe, T.

TCAD Optimisation of 4H-SiC Channel-Doped MOSFET with P-Polysilicon Gate

Adachi, K. / Johnson, C. M. / Arai, K. / Fukuda, K. / Harada, S. / Shinohe, T.

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Title:

TCAD Optimisation of 4H-SiC Channel-Doped MOSFET with P-Polysilicon Gate

Contributors:

Adachi, K. (author) / Johnson, C. M. (author) / Arai, K. (author) / Fukuda, K. (author) / Harada, S. (author) / Shinohe, T. (author)

Published in:

MATERIALS SCIENCE FORUM ; 389/393 ; 1085-1088

Publication date:

2002-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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