Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Photon Emission Analysis of Defect-Free 4H-SiC pn Diodes in Avalanche Regime
Photon Emission Analysis of Defect-Free 4H-SiC pn Diodes in Avalanche Regime
Photon Emission Analysis of Defect-Free 4H-SiC pn Diodes in Avalanche Regime
Banc, C. (Autor:in) / Bano, E. (Autor:in) / Ouisse, T. (Autor:in) / Vassilevski, K. (Autor:in) / Zekentes, K. (Autor:in)
MATERIALS SCIENCE FORUM ; 389/393 ; 1293-1296
01.01.2002
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Proton Irradiation of 4H-SiC Ultraviolet Single Photon Avalanche Diodes
British Library Online Contents | 2011
|Avalanche Multiplication and Breakdown in 4H-SiC Diodes
British Library Online Contents | 2004
|Optimization of Bipolar SiC-Diodes by Analysis of Avalanche Breakdown Performance
British Library Online Contents | 2010
|Avalanche Breakdown Electroluminescence in Silicon Carbide Light Emitting Diodes
British Library Online Contents | 2000
|Dynamic Avalanche and Trapped Charge in 4H-SiC Diodes
British Library Online Contents | 2000
|