High-Resolution X-Ray Diffractometry Investigation of Interface Layers in GaN/AlN Structures Grown on Sapphire Substrates: Fid-Bau Portal

High-Resolution X-Ray Diffractometry Investigation of Interface Layers in GaN/AlN Structures Grown on Sapphire Substrates

Mudie, S. / Pavlov, K. / Morgan, M. / Tabuchi, M. / Takeda, Y. / Hester, J.

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High-Resolution X-Ray Diffractometry Investigation of Interface Layers in GaN/AlN Structures Grown on Sapphire Substrates

Mudie, S. / Pavlov, K. / Morgan, M. / Tabuchi, M. / Takeda, Y. / Hester, J.

High-Resolution X-Ray Diffractometry Investigation of Interface Layers in GaN/AlN Structures Grown on Sapphire Substrates

Mudie, S. / Pavlov, K. / Morgan, M. / Tabuchi, M. / Takeda, Y. / Hester, J.

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Document information

Title:

High-Resolution X-Ray Diffractometry Investigation of Interface Layers in GaN/AlN Structures Grown on Sapphire Substrates

Contributors:

Mudie, S. (author) / Pavlov, K. (author) / Morgan, M. (author) / Tabuchi, M. (author) / Takeda, Y. (author) / Hester, J. (author)

Published in:

SURFACE REVIEW AND LETTERS ; 10 ; 513-518

Publication date:

2003-01-01

Size:

6 pages

ISSN:

0218-625X

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 530.417

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