Interband transition studies of one-side modulation-doped AlxGa1-xAs/InyGa1-yAs/GaAs asymmetric step quantum wells

Jung, M. / Kim, T. W. / Lee, D. U. et al. | British Library Online Contents | 2002

Atomic arrangements, electronic parameters, and electronic structures in modulation-doped AlxGa1-xAs/InyGa1-yAs/AlxGa1-xAs step quantum wells

Jung, M. / Kim, T. W. | British Library Online Contents | 2004

Enhancement of the activation energy in modulation-doped AlxGa1-x As/InyGa1-yAs/GaAs quantum wells due to an embedded deep step layer

Choo, D. C. / Kim, T. W. | British Library Online Contents | 2004

Dependence of the electronic parameters on the InyGa1-yAs quantum well width in modulation-doped AlxGa1-xAs/InyGa1-yAs/GaAs strained single quantum wells

Lee, D. U. / Kim, T. W. / Yoo, K. H. | British Library Online Contents | 2005

The dependence of the carrier density and the mobility on the spacer-layer thickness in modulation-doped AlxGa1-xAs/InyGa1-yAs/GaAs asymmetric single quantum wells

Jung, M. / Kim, T. W. / Lee, D. U. et al. | British Library Online Contents | 2001