Cryogenic field effect transistors using strained silicon quantum wells in Si:SiGe heterostructures grown by APCVD

Rack, M. J. / Thornton, T. J. / Ferry, D. K. et al. | British Library Online Contents | 2001

AlGaInP/GaInAs/GaAs MODFET devices: candidates for optoelectronic integrated circuits

Pletschen, W. / Bachem, K. H. / Tasker, P. J. et al. | British Library Online Contents | 1993

DC and RF Performance of Insulating Gate 4H-SiC Depletion Mode Field Effect Transistors

Jonsson, R. / Wahab, Q. / Rudner, S. | British Library Online Contents | 2004

Virtual substrates for the n- and p-type Si-MODFET grown at very high rates

Rosenblad, C. / Kummer, M. / Dommann, A. et al. | British Library Online Contents | 2000

Hysteresis in Transfer Characteristics in 4H-SiC Depletion/Accumulation-Mode MOSFETs

Chatty, K. / Banerjee, S. / Chow, T. P. et al. | British Library Online Contents | 2002