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Modeling of the transient enhanced diffusion of boron implanted into preamorphized silicon: the case of BF2+ implantation
Modeling of the transient enhanced diffusion of boron implanted into preamorphized silicon: the case of BF2+ implantation
Modeling of the transient enhanced diffusion of boron implanted into preamorphized silicon: the case of BF2+ implantation
Dusch, A. (Autor:in) / Marcon, J. (Autor:in) / Masmoudi, K. (Autor:in) / Olivie, F. (Autor:in) / Benzohra, M. (Autor:in) / Ketata, K. (Autor:in) / Ketata, M. (Autor:in)
MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 80 ; 65 - 67
01.01.2001
3 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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