Al2O3/Si0.7Ge0.3(001) & HfO2/Si0.7Ge0.3(001) interface trap state reduction via in-situ N2/H2 RF downstream plasma passivation: Fid-Bau Portal

Al2O3/Si0.7Ge0.3(001) & HfO2/Si0.7Ge0.3(001) interface trap state reduction via in-situ N2/H2 RF downstream plasma passivation

Breeden, Michael / Wolf, Steven / Ueda, Scott / Fang, Ziwei / Chang, Chih-Yu / Tang, Kechao / McIntyre, Paul / Kummel, Andrew C.

Zugriff

Zugriff über TIB

Verfügbarkeit in meiner Bibliothek prüfen

Bestellung bei Subito €

Seitennavigation

Dokumentinformationen

Ähnliche Titel

Exportieren, teilen und zitieren

Al2O3/Si0.7Ge0.3(001) & HfO2/Si0.7Ge0.3(001) interface trap state reduction via in-situ N2/H2 RF downstream plasma passivation

Breeden, Michael / Wolf, Steven / Ueda, Scott / Fang, Ziwei / Chang, Chih-Yu / Tang, Kechao / McIntyre, Paul / Kummel, Andrew C.

Al2O3/Si0.7Ge0.3(001) & HfO2/Si0.7Ge0.3(001) interface trap state reduction via in-situ N2/H2 RF downstream plasma passivation

Breeden, Michael / Wolf, Steven / Ueda, Scott / Fang, Ziwei / Chang, Chih-Yu / Tang, Kechao / McIntyre, Paul / Kummel, Andrew C.

Zugriff

Zugriff über TIB

Verfügbarkeit in meiner Bibliothek prüfen

Bestellung bei Subito €

Seitennavigation

Dokumentinformationen

Ähnliche Titel

Exportieren, teilen und zitieren

Dokumentinformationen

Titel:

Al2O3/Si0.7Ge0.3(001) & HfO2/Si0.7Ge0.3(001) interface trap state reduction via in-situ N2/H2 RF downstream plasma passivation

Beteiligte:

Breeden, Michael (Autor:in) / Wolf, Steven (Autor:in) / Ueda, Scott (Autor:in) / Fang, Ziwei (Autor:in) / Chang, Chih-Yu (Autor:in) / Tang, Kechao (Autor:in) / McIntyre, Paul (Autor:in) / Kummel, Andrew C. (Autor:in)

Erschienen in:

Applied surface science ; 478 ; 1065-1073

Erscheinungsdatum:

01.01.2019

Format / Umfang:

9 pages

ISSN:

0169-4332

Medientyp:

Aufsatz (Zeitschrift)

Format:

Sprache:

Englisch

Klassifikation:

DDC: 620.44

Tao, Z. / Zhan, N. / Yang, H. et al. | British Library Online Contents | 2009

Low-temperature amorphous boron nitride on Si0.7Ge0.3(001), Cu, and HOPG from sequential exposures of N2H4 and BCl3

Wolf, Steven / Edmonds, Mary / Sardashti, Kasra et al. | British Library Online Contents | 2018

Quality of SiO2 and of SiGe formed by oxidation of Si/Si0.7Ge0.3 heterostructure using atomic oxygen at 400degreeC

Nohira, H. / Kuroiwa, T. / Nakamura, M. et al. | British Library Online Contents | 2004

Enhanced formation of periodic arrays of low-resistivity NiSi nanocontacts on (001)Si0.7Ge0.3 by nanosphere lithography with a thin interposing Si layer

Cheng, S. L. / Zhan, C. Y. / Lee, S. W. et al. | British Library Online Contents | 2011

Low-temperature amorphous boron nitride on Si0.7Ge0.3(001), Cu, and HOPG from sequential exposures of N2H4 and BCl3

Wolf, Steven / Edmonds, Mary / Sardashti, Kasra et al. | British Library Online Contents | 2018

Nach oben