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Fabrication of thick, high-quality strained SiGe layer on ultra-thin silicon-on-insulator and modeling of film strain
Fabrication of thick, high-quality strained SiGe layer on ultra-thin silicon-on-insulator and modeling of film strain
Fabrication of thick, high-quality strained SiGe layer on ultra-thin silicon-on-insulator and modeling of film strain
Di, Z. (Autor:in) / Zhang, M. (Autor:in) / Liu, W. (Autor:in) / Lin, C. (Autor:in) / Chu, P. K. (Autor:in)
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 7 ; 393-397
01.01.2004
5 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.38152
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