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Studies of ultra shallow n+-p junctions formed by low-energy As-implantation
Studies of ultra shallow n+-p junctions formed by low-energy As-implantation
Studies of ultra shallow n+-p junctions formed by low-energy As-implantation
Girginoudi, D. (Autor:in) / Georgoulas, N. (Autor:in) / Thanailakis, A. (Autor:in) / Polychroniadis, E. K. (Autor:in)
MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 114/115 ; 381-385
01.01.2004
5 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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