Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
In situ defect etching of strained-Si layers with HCl gas
In situ defect etching of strained-Si layers with HCl gas
In situ defect etching of strained-Si layers with HCl gas
Kreuzer, S. (Autor:in) / Bensch, F. (Autor:in) / Merkel, R. (Autor:in) / Vogg, G. (Autor:in)
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 8 ; 143-147
01.01.2005
5 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.38152
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