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In situ defect etching of strained-Si layers with HCl gas
In situ defect etching of strained-Si layers with HCl gas
In situ defect etching of strained-Si layers with HCl gas
Kreuzer, S. (author) / Bensch, F. (author) / Merkel, R. (author) / Vogg, G. (author)
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 8 ; 143-147
2005-01-01
5 pages
Article (Journal)
English
DDC:
621.38152
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