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A high throughput, ultra-low roughness, SiGe-free strained Si regrowth process
A high throughput, ultra-low roughness, SiGe-free strained Si regrowth process
A high throughput, ultra-low roughness, SiGe-free strained Si regrowth process
Leitz, C. (Autor:in) / Yang, V. (Autor:in) / Carroll, M. (Autor:in) / Langdo, T. (Autor:in) / Westhoff, R. (Autor:in) / Vineis, C. (Autor:in) / Bulsara, M. (Autor:in)
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 8 ; 187-192
01.01.2005
6 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.38152
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