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A high throughput, ultra-low roughness, SiGe-free strained Si regrowth process

Leitz, C. / Yang, V. / Carroll, M. / Langdo, T. / Westhoff, R. / Vineis, C. / Bulsara, M.

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A high throughput, ultra-low roughness, SiGe-free strained Si regrowth process

Leitz, C. / Yang, V. / Carroll, M. / Langdo, T. / Westhoff, R. / Vineis, C. / Bulsara, M.

A high throughput, ultra-low roughness, SiGe-free strained Si regrowth process

Leitz, C. / Yang, V. / Carroll, M. / Langdo, T. / Westhoff, R. / Vineis, C. / Bulsara, M.

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Check availability in my library

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Document information

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Document information

Title:

A high throughput, ultra-low roughness, SiGe-free strained Si regrowth process

Contributors:

Leitz, C. (author) / Yang, V. (author) / Carroll, M. (author) / Langdo, T. (author) / Westhoff, R. (author) / Vineis, C. (author) / Bulsara, M. (author)

Published in:

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 8 ; 187-192

Publication date:

2005-01-01

Size:

6 pages

ISSN:

1369-8001

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.38152

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