Boron diffusion in presence of defects induced by helium implantation

Cayrel, F. / Alquier, D. / Dubois, C. et al. | British Library Online Contents | 2005

Formation of Extended Defects in 4H-SiC Induced by Ion Implantation/Annealing

Nagano, M. / Tsuchida, H. / Suzuki, T. et al. | British Library Online Contents | 2009

Effects of Si~3N~4 Films on Diffusion of Boron and Extended Defects in Silicon During Post-Implantation Annealing

Zaitsu, Y. / Osada, K. / Shimizu, T. et al. | British Library Online Contents | 1995

Isochronal annealing study of hydrogen interaction with implantation-induced point defects in p-type silicon

Tokuda, Y. / Sato, H. | British Library Online Contents | 2003

Ion implantation induced defects in epitaxial 4H-SiC

Hallen, A. / Henry, A. / Pellegrino, P. et al. | British Library Online Contents | 1999