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Influence of carrier gas pressure and flow rate on atomic layer deposition of HfO2 and ZrO2 thin films
Influence of carrier gas pressure and flow rate on atomic layer deposition of HfO2 and ZrO2 thin films
Influence of carrier gas pressure and flow rate on atomic layer deposition of HfO2 and ZrO2 thin films
Aarik, J. (Autor:in) / Aidla, A. (Autor:in) / Kasikov, A. (Autor:in) / Mandar, H. (Autor:in) / Rammula, R. (Autor:in) / Sammelselg, V. (Autor:in)
APPLIED SURFACE SCIENCE ; 252 ; 5723-5734
01.01.2006
12 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
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Silicon surface passivation using thin HfO2 films by atomic layer deposition
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