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Electrical activity of dislocations in epitaxial ZnO- and GaN-layers analyzed by holography in a transmission electron microscope
Electrical activity of dislocations in epitaxial ZnO- and GaN-layers analyzed by holography in a transmission electron microscope
Electrical activity of dislocations in epitaxial ZnO- and GaN-layers analyzed by holography in a transmission electron microscope
Muller, E. (Autor:in) / Gerthsen, D. (Autor:in) / Bruckner, P. (Autor:in) / Scholz, F. (Autor:in) / Kirchner, C. (Autor:in) / Waag, A. (Autor:in)
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 9 ; 127-131
01.01.2006
5 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.38152
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