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Electrical activity of dislocations in epitaxial ZnO- and GaN-layers analyzed by holography in a transmission electron microscope
Electrical activity of dislocations in epitaxial ZnO- and GaN-layers analyzed by holography in a transmission electron microscope
Electrical activity of dislocations in epitaxial ZnO- and GaN-layers analyzed by holography in a transmission electron microscope
Muller, E. (author) / Gerthsen, D. (author) / Bruckner, P. (author) / Scholz, F. (author) / Kirchner, C. (author) / Waag, A. (author)
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 9 ; 127-131
2006-01-01
5 pages
Article (Journal)
English
DDC:
621.38152
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