Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Differences in Emission Spectra of Dislocations in 4H-SiC Epitaxial Layers
Differences in Emission Spectra of Dislocations in 4H-SiC Epitaxial Layers
Differences in Emission Spectra of Dislocations in 4H-SiC Epitaxial Layers
Liu, K.X. (Autor:in) / Zhang, X. (Autor:in) / Stahlbush, R.E. (Autor:in) / Skowronski, M. (Autor:in) / Caldwell, J.D. (Autor:in)
MATERIALS SCIENCE FORUM ; 600/603 ; 345-348
01.01.2009
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Investigation of In-Grown Dislocations in 4H-SiC Epitaxial Layers
British Library Online Contents | 2006
|Comparative study of threading dislocations in GaN epitaxial layers by nondestructive methods
British Library Online Contents | 2017
|Comparative study of threading dislocations in GaN epitaxial layers by nondestructive methods
British Library Online Contents | 2017
|Bending of Basal-Plane Dislocations in VPE Grown 4H-SiC Epitaxial Layers
British Library Online Contents | 2002
|British Library Online Contents | 2008
|