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Strained Si engineering for nanoscale MOSFETs
Strained Si engineering for nanoscale MOSFETs
Strained Si engineering for nanoscale MOSFETs
Park, J. G. (Autor:in) / Lee, G. S. (Autor:in) / Kim, T. H. (Autor:in) / Hong, S. H. (Autor:in) / Kim, S. J. (Autor:in) / Song, J. H. (Autor:in) / Shim, T. H. (Autor:in)
MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 134 ; 142-153
01.01.2006
12 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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