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High Purity SiC Epitaxial Growth by Chemical Vapor Deposition Using CH~3SiH~3 and C~3H~8 Sources
High Purity SiC Epitaxial Growth by Chemical Vapor Deposition Using CH~3SiH~3 and C~3H~8 Sources
High Purity SiC Epitaxial Growth by Chemical Vapor Deposition Using CH~3SiH~3 and C~3H~8 Sources
Hatayama, T. (Autor:in) / Yano, H. (Autor:in) / Uraoka, Y. (Autor:in) / Fuyuki, T. (Autor:in) / Devaty, R. P. / Larkin, D. J. / Saddow, S. E.
01.01.2006
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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