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Development of Non-Destructive In-House Observation Techniques for Dislocations and Stacking Faults in SiC Epilayers
Development of Non-Destructive In-House Observation Techniques for Dislocations and Stacking Faults in SiC Epilayers
Development of Non-Destructive In-House Observation Techniques for Dislocations and Stacking Faults in SiC Epilayers
Kamata, I. (Autor:in) / Tsuchida, H. (Autor:in) / Miyanagi, T. (Autor:in) / Nakamura, T. (Autor:in) / Devaty, R. P. / Larkin, D. J. / Saddow, S. E.
01.01.2006
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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British Library Online Contents | 2012
|Single Shockley Stacking Faults in As-Grown 4H-SiC Epilayers
British Library Online Contents | 2010
|Residual Stresses and Stacking Faults in n-Type 4H-SiC Epilayers
British Library Online Contents | 2004
|Impact of Carrier Lifetimes on Non-Destructive Mapping of Dislocations in 4H-SiC Epilayers
British Library Online Contents | 2011
|Optical and Structural Properties of In-Grown Stacking Faults in 4H-SiC Epilayers
British Library Online Contents | 2010
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