Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Characteristics improvement of HfO2/Ge gate stack structure by fluorine treatment of germanium surface
Characteristics improvement of HfO2/Ge gate stack structure by fluorine treatment of germanium surface
Characteristics improvement of HfO2/Ge gate stack structure by fluorine treatment of germanium surface
Lee, H. (Autor:in) / Lee, D. H. (Autor:in) / Kanashima, T. (Autor:in) / Okuyama, M. (Autor:in)
APPLIED SURFACE SCIENCE ; 254 ; 6932-6936
01.01.2008
5 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
| British Library Online Contents | 2010
Effect of modification of S-terminated Ge(100) surface on ALD HfO2 gate stack
| British Library Online Contents | 2009
Improvement in electrical characteristics of HfO2 gate dielectrics treated by remote NH3 plasma
| British Library Online Contents | 2013
The effect of oxygen in Ru gate electrode on effective work function of Ru/HfO2 stack structure
| British Library Online Contents | 2006
Electrical property of HfOxNy-HfO2-HfOxNy sandwich-stack films
| British Library Online Contents | 2006