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Depth profiling of ultra-thin oxynitride gate dielectrics by using MCs2+ technique
Depth profiling of ultra-thin oxynitride gate dielectrics by using MCs2+ technique
Depth profiling of ultra-thin oxynitride gate dielectrics by using MCs2+ technique
Gui, D. (Autor:in) / Mo, Z. Q. (Autor:in) / Xing, Z. X. (Autor:in) / Huang, Y. H. (Autor:in) / Hua, Y. N. (Autor:in) / Zhao, S. P. (Autor:in) / Cha, L. Z. (Autor:in)
APPLIED SURFACE SCIENCE ; 255 ; 1437-1439
01.01.2008
3 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
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