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Depth profiling of ultra-thin oxynitride gate dielectrics by using MCs2+ technique

Gui, D. / Mo, Z. Q. / Xing, Z. X. / Huang, Y. H. / Hua, Y. N. / Zhao, S. P. / Cha, L. Z.

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Depth profiling of ultra-thin oxynitride gate dielectrics by using MCs2+ technique

Gui, D. / Mo, Z. Q. / Xing, Z. X. / Huang, Y. H. / Hua, Y. N. / Zhao, S. P. / Cha, L. Z.

Depth profiling of ultra-thin oxynitride gate dielectrics by using MCs2+ technique

Gui, D. / Mo, Z. Q. / Xing, Z. X. / Huang, Y. H. / Hua, Y. N. / Zhao, S. P. / Cha, L. Z.

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Check availability in my library

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Document information

Title:

Depth profiling of ultra-thin oxynitride gate dielectrics by using MCs2+ technique

Contributors:

Gui, D. (author) / Mo, Z. Q. (author) / Xing, Z. X. (author) / Huang, Y. H. (author) / Hua, Y. N. (author) / Zhao, S. P. (author) / Cha, L. Z. (author)

Published in:

APPLIED SURFACE SCIENCE ; 255 ; 1437-1439

Publication date:

2008-01-01

Size:

3 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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