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Modelling of Boron Trapping at End-of-Range defects in pre-amorphized ultra-shallow junctions
Modelling of Boron Trapping at End-of-Range defects in pre-amorphized ultra-shallow junctions
Modelling of Boron Trapping at End-of-Range defects in pre-amorphized ultra-shallow junctions
Bazizi, E. M. (Autor:in) / Fazzini, P. F. (Autor:in) / Zechner, C. (Autor:in) / Tsibizov, A. (Autor:in) / Kheyrandish, H. (Autor:in) / Pakfar, A. (Autor:in) / Ciampolini, L. (Autor:in) / Tavernier, C. (Autor:in) / Cristiano, F. (Autor:in)
MATERIALS SCIENCE AND ENGINEERING B ADVANCED FUNCTIONAL SOLID STATE MATERIALS ; 154-155 ; 275-278
01.01.2008
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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