Detection and Characterization of Defects Induced by Ion Implantation/Annealing Process in SiC: Fid-Bau Portal

Detection and Characterization of Defects Induced by Ion Implantation/Annealing Process in SiC

Nagano, M. / Tsuchida, H. / Suzuki, T. / Hatakeyama, T. / Senzaki, J. / Fukuda, K.

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Detection and Characterization of Defects Induced by Ion Implantation/Annealing Process in SiC

Nagano, M. / Tsuchida, H. / Suzuki, T. / Hatakeyama, T. / Senzaki, J. / Fukuda, K.

Detection and Characterization of Defects Induced by Ion Implantation/Annealing Process in SiC

Nagano, M. / Tsuchida, H. / Suzuki, T. / Hatakeyama, T. / Senzaki, J. / Fukuda, K.

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Check availability in my library

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Document information

Title:

Detection and Characterization of Defects Induced by Ion Implantation/Annealing Process in SiC

Contributors:

Nagano, M. (author) / Tsuchida, H. (author) / Suzuki, T. (author) / Hatakeyama, T. (author) / Senzaki, J. (author) / Fukuda, K. (author)

Published in:

MATERIALS SCIENCE FORUM ; 600/603 ; 611-614

Publication date:

2009-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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