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Thin SiC-4H Epitaxial Layer Growth by Trichlorosilane (TCS) as Silicon Precursor with Very Abrupt Junctions
Thin SiC-4H Epitaxial Layer Growth by Trichlorosilane (TCS) as Silicon Precursor with Very Abrupt Junctions
Thin SiC-4H Epitaxial Layer Growth by Trichlorosilane (TCS) as Silicon Precursor with Very Abrupt Junctions
Condorelli, G. (Autor:in) / Mauceri, M. (Autor:in) / Pistone, G. (Autor:in) / Perdicaro, L.M.S. (Autor:in) / Abbondanza, G. (Autor:in) / Portuese, F. (Autor:in) / Valente, G.L. (Autor:in) / Crippa, D. (Autor:in) / Giannazzo, F. (Autor:in) / La Via, F. (Autor:in)
MATERIALS SCIENCE FORUM ; 600/603 ; 127-130
01.01.2009
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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