Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Molecular dynamics simulation of defect formation and precipitation in heavily carbon doped silicon
Molecular dynamics simulation of defect formation and precipitation in heavily carbon doped silicon
Molecular dynamics simulation of defect formation and precipitation in heavily carbon doped silicon
Zirkelbach, F. (Autor:in) / Lindner, J. K. (Autor:in) / Nordlund, K. (Autor:in) / Stritzker, B. (Autor:in)
MATERIALS SCIENCE AND ENGINEERING B ADVANCED FUNCTIONAL SOLID STATE MATERIALS ; 159-160 ; 149-152
01.01.2009
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Oxide precipitation behavior in heavily doped silicon wafer after rapid thermal process
British Library Online Contents | 2006
|Oxygen precipitation and improved internal gettering in heavily As-doped silicon crystal
British Library Online Contents | 2006
|Oxygen precipitation in heavily phosphorus-doped silicon wafer annealed at high temperatures
British Library Online Contents | 2009
|Defect structures in heavily In-doped II-VI semiconductors
British Library Online Contents | 1997
|Dislocation behavior in heavily germanium-doped silicon crystal
British Library Online Contents | 2002
|