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P- and n-Type Doping in SiC Sublimation Epitaxy Using Highly Doped Substrates
P- and n-Type Doping in SiC Sublimation Epitaxy Using Highly Doped Substrates
P- and n-Type Doping in SiC Sublimation Epitaxy Using Highly Doped Substrates
Hens, P. (Autor:in) / Syvajarvi, M. (Autor:in) / Oehlschlager, F. (Autor:in) / Wellmann, P.J. (Autor:in) / Yakimova, R. (Autor:in)
MATERIALS SCIENCE FORUM ; 615/617 ; 85-88
01.01.2009
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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