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Investigation of Low Doped n-Type and p-Type 3C-SiC Layers Grown on 6H-SiC Substrates by Sublimation Epitaxy
Investigation of Low Doped n-Type and p-Type 3C-SiC Layers Grown on 6H-SiC Substrates by Sublimation Epitaxy
Investigation of Low Doped n-Type and p-Type 3C-SiC Layers Grown on 6H-SiC Substrates by Sublimation Epitaxy
Zoulis, G. (Autor:in) / Sun, J.W. (Autor:in) / Beshkova, M. (Autor:in) / Vasiliauskas, R. (Autor:in) / Juillaguet, S. (Autor:in) / Peyre, H. (Autor:in) / Syvajarvi, M. (Autor:in) / Yakimova, R. (Autor:in) / Camassel, J. (Autor:in) / Bauer, A.J.
01.01.2010
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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