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Impact of Carbon Cap Annealing on Gate Oxide Reliability on 4H-SiC (000-1) C-Face
Impact of Carbon Cap Annealing on Gate Oxide Reliability on 4H-SiC (000-1) C-Face
Impact of Carbon Cap Annealing on Gate Oxide Reliability on 4H-SiC (000-1) C-Face
Harada, S. (Autor:in) / Kato, M. (Autor:in) / Ito, S. (Autor:in) / Suzuki, K. (Autor:in) / Ohyanagi, T. (Autor:in) / Senzaki, J. (Autor:in) / Fukuda, K. (Autor:in) / Okumura, H. (Autor:in) / Arai, K. (Autor:in)
MATERIALS SCIENCE FORUM ; 615/617 ; 549-552
01.01.2009
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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