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Reliability of Large-Area Gate Oxide on the C-Face of 4H-SiC
Reliability of Large-Area Gate Oxide on the C-Face of 4H-SiC
Reliability of Large-Area Gate Oxide on the C-Face of 4H-SiC
Hatakeyama, T. (Autor:in) / Kono, H. (Autor:in) / Suzuki, T. (Autor:in) / Senzaki, J. (Autor:in) / Fukuda, K. (Autor:in) / Shinohe, T. (Autor:in) / Arai, K. (Autor:in)
MATERIALS SCIENCE FORUM ; 615/617 ; 553-556
01.01.2009
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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