Impact of Carbon Cap Annealing on Gate Oxide Reliability on 4H-SiC (000-1) C-Face: Fid-Bau Portal

Impact of Carbon Cap Annealing on Gate Oxide Reliability on 4H-SiC (000-1) C-Face

Harada, S. / Kato, M. / Ito, S. / Suzuki, K. / Ohyanagi, T. / Senzaki, J. / Fukuda, K. / Okumura, H. / Arai, K.

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Impact of Carbon Cap Annealing on Gate Oxide Reliability on 4H-SiC (000-1) C-Face

Harada, S. / Kato, M. / Ito, S. / Suzuki, K. / Ohyanagi, T. / Senzaki, J. / Fukuda, K. / Okumura, H. / Arai, K.

Impact of Carbon Cap Annealing on Gate Oxide Reliability on 4H-SiC (000-1) C-Face

Harada, S. / Kato, M. / Ito, S. / Suzuki, K. / Ohyanagi, T. / Senzaki, J. / Fukuda, K. / Okumura, H. / Arai, K.

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Title:

Impact of Carbon Cap Annealing on Gate Oxide Reliability on 4H-SiC (000-1) C-Face

Contributors:

Harada, S. (author) / Kato, M. (author) / Ito, S. (author) / Suzuki, K. (author) / Ohyanagi, T. (author) / Senzaki, J. (author) / Fukuda, K. (author) / Okumura, H. (author) / Arai, K. (author)

Published in:

MATERIALS SCIENCE FORUM ; 615/617 ; 549-552

Publication date:

2009-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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