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Reliability of Large-Area Gate Oxide on the C-Face of 4H-SiC
Reliability of Large-Area Gate Oxide on the C-Face of 4H-SiC
Reliability of Large-Area Gate Oxide on the C-Face of 4H-SiC
Hatakeyama, T. (author) / Kono, H. (author) / Suzuki, T. (author) / Senzaki, J. (author) / Fukuda, K. (author) / Shinohe, T. (author) / Arai, K. (author)
MATERIALS SCIENCE FORUM ; 615/617 ; 553-556
2009-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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