Investigation of Low Doped n-Type and p-Type 3C-SiC Layers Grown on 6H-SiC Substrates by Sublimation Epitaxy: Fid-Bau Portal

Investigation of Low Doped n-Type and p-Type 3C-SiC Layers Grown on 6H-SiC Substrates by Sublimation Epitaxy

Zoulis, G. / Sun, J.W. / Beshkova, M. / Vasiliauskas, R. / Juillaguet, S. / Peyre, H. / Syvajarvi, M. / Yakimova, R. / Camassel, J.

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Investigation of Low Doped n-Type and p-Type 3C-SiC Layers Grown on 6H-SiC Substrates by Sublimation Epitaxy

Zoulis, G. / Sun, J.W. / Beshkova, M. / Vasiliauskas, R. / Juillaguet, S. / Peyre, H. / Syvajarvi, M. / Yakimova, R. / Camassel, J.

Investigation of Low Doped n-Type and p-Type 3C-SiC Layers Grown on 6H-SiC Substrates by Sublimation Epitaxy

Zoulis, G. / Sun, J.W. / Beshkova, M. / Vasiliauskas, R. / Juillaguet, S. / Peyre, H. / Syvajarvi, M. / Yakimova, R. / Camassel, J.

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Title:

Investigation of Low Doped n-Type and p-Type 3C-SiC Layers Grown on 6H-SiC Substrates by Sublimation Epitaxy

Contributors:

Zoulis, G. (author) / Sun, J.W. (author) / Beshkova, M. (author) / Vasiliauskas, R. (author) / Juillaguet, S. (author) / Peyre, H. (author) / Syvajarvi, M. (author) / Yakimova, R. (author) / Camassel, J. (author) / Bauer, A.J.

Published in:

Silicon Carbide and Related Materials 2009 ; 179-182

MATERIALS SCIENCE FORUM ; 645/648

Publication date:

2010-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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Savkina, N. S. / Lebedev, A. A. / Davydov, D. V. et al. | British Library Online Contents | 2000

Investigation of 3C-SiC Epitaxial Layers Grown by Sublimation Epitaxy

Davydov, D. V. / Lebedev, A. A. / Tregubova, A. S. et al. | British Library Online Contents | 2000

Properties of 3C-SiC Grown by Sublimation Epitaxy on Different Type of Substrates

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Properties of AlN Layers Grown by Sublimation Epitaxy

Beshkova, M. / Zakhariev, Z. / Birch, J. et al. | British Library Online Contents | 2003