Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Characteristics of Diamond SBD's Fabricated on Half Inch Size CVD Wafer Made by the ``Direct Wafer Fabrication Technique''
Characteristics of Diamond SBD's Fabricated on Half Inch Size CVD Wafer Made by the ``Direct Wafer Fabrication Technique''
Characteristics of Diamond SBD's Fabricated on Half Inch Size CVD Wafer Made by the ``Direct Wafer Fabrication Technique''
Shikata, S. (Autor:in) / Umezawa, H. (Autor:in) / Yamada, H. (Autor:in) / Tsubouchi, T. (Autor:in) / Mokuno, Y. (Autor:in) / Chayahara, A. (Autor:in) / Bauer, A.J. / Friedrichs, P. / Krieger, M. / Pensl, G.
Silicon Carbide and Related Materials 2009 ; 1227-1230
MATERIALS SCIENCE FORUM ; 645/648
01.01.2010
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Observation of Planar Defects in 2-inch SiC Wafer
British Library Online Contents | 2002
|Single electron transistor fabricated with SOI wafer
British Library Online Contents | 2006
|Surface Polishing of 2-Inch 4H-SiC Wafer Using Fe Abrasive Particles
British Library Online Contents | 2012
|Thinning Silicon Wafer with Polycrystalline Diamond Tools
British Library Online Contents | 2009
|