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The Effect of Growth Conditions on Carrier Lifetime in n-Type 4H-SiC Epitaxial Layers
The Effect of Growth Conditions on Carrier Lifetime in n-Type 4H-SiC Epitaxial Layers
The Effect of Growth Conditions on Carrier Lifetime in n-Type 4H-SiC Epitaxial Layers
Lilja, L. (Autor:in) / Hassan, J. (Autor:in) / Booker, I.D. (Autor:in) / Bergman, J.P. (Autor:in) / Janzen, E. (Autor:in)
MATERIALS SCIENCE FORUM ; 717/720 ; 161-164
01.01.2012
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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British Library Online Contents | 2009
|Identification of Defects Limiting the Carrier Lifetime in n^- Epitaxial Layers of 4H-SiC
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