X-ray photoelectron spectroscopy characterisation of high-k dielectric Al2O3 and HfO2 layers deposited on SiO2/Si surface

Vitchev, R. G. / Pireaux, J. J. / Conard, T. et al. | British Library Online Contents | 2004

Characteristics of sandwich-structured Al2O3/HfO2/Al2O3 gate dielectric films on ultra-thin silicon-on-insulator substrates

Cheng, X. / Song, Z. / Jiang, J. et al. | British Library Online Contents | 2005

Effect of the post-deposition annealing on electrical characteristics of MIS structures with HfO2/SiO2 gate dielectric stacks

Taube, A. / Mroczynski, R. / Korwin-Mikke, K. et al. | British Library Online Contents | 2012

GaN metal-oxide-semiconductor field-effect-transistor with atomic layer deposited Al2O3 as gate dielectric

Wu, Y. Q. / Ye, P. D. / Wilk, G. D. et al. | British Library Online Contents | 2006

Metal carbide-induced negative flatband voltage shift in TaCx and HfCx/HfO2 gate stacks

Mizubayashi, W. / Akiyama, K. / Wang, W. et al. | British Library Online Contents | 2008