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Characteristics of SiOX thin films deposited by atmospheric pressure chemical vapor deposition using a double-discharge system
Characteristics of SiOX thin films deposited by atmospheric pressure chemical vapor deposition using a double-discharge system
Characteristics of SiOX thin films deposited by atmospheric pressure chemical vapor deposition using a double-discharge system
Park, J. (Autor:in) / Oh, J. (Autor:in) / Gil, E. (Autor:in) / Yeom, G.Y. (Autor:in) / Boo, J.-H. / Ahn, H.
01.01.2012
4 pages
Aufsatz (Zeitschrift)
Englisch
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